FNK10N02 mosfet equivalent, n-channel power mosfet.
* VDS =20V,ID =180A RDS(ON) <2.25mΩ @ VGS=4.5V
(Typ2.07mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and curren.
General Features
* VDS =20V,ID =180A RDS(ON) <2.25mΩ @ VGS=4.5V
(Typ2.07mΩ)
* High density cell design for u.
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