FNK1404 mosfet equivalent, n-channel power mosfet.
* VDS =45V ,ID =205A
Rds(on) <4mΩ @ Vgs=10V (Typ:2.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
General Features
* VDS =45V ,ID =205A
Rds(on) <4mΩ @ Vgs=10V (Typ:2.8mΩ)
* High density cell design for ultra .
Image gallery
Download