FNK30H80A mosfet equivalent, n-channel power mosfet.
* VDS =30V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V RDS(ON) < 8.2mΩ @ VGS=5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage an.
General Features
* VDS =30V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V RDS(ON) < 8.2mΩ @ VGS=5V
* High density cell desi.
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