n-channel power mosfet.
General Feature
* VDS =60V,ID =110A RDS(ON) < 6.0mΩ @ VGS=10V
(Typ:4.9mΩ)
* Special process technology for h.
The FNK3205A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Feature
* VDS =60V,ID =110A RDS(ON) < 6.0mΩ @ VGS=10V
(Typ:4.9mΩ)
* Specia.
Image gallery
TAGS
Download (Size : 1.42MB)