FNK85N06 mosfet equivalent, n-channel power mosfet.
* VDS =85V,ID =100A RDS(ON) < 7.1mΩ @ VGS=10V
(Typ:5.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current.
FNK85N06
General Features
* VDS =85V,ID =100A RDS(ON) < 7.1mΩ @ VGS=10V
(Typ:5.8mΩ)
* High density cell des.
The FNK85N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
FNK85N06
General Features
* VDS =85V,ID =100A RD.
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