Datasheet Summary
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK85N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
- VDS =85V,ID =100A RDS(ON) < 7.1mΩ @ VGS=10V
(Typ:5.8mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Special designed for convertors and power controls
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Schematic diagram
Application
- Power switching...