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FNK85N06 - N-Channel Power MOSFET

Description

The FNK85N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Features

  • VDS =85V,ID =100A RDS(ON) < 7.1mΩ @ VGS=10V (Typ:5.8mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Special designed for convertors and power controls.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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Datasheet Details

Part number FNK85N06
Manufacturer FNK
File Size 1.18 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK85N06 Datasheet
Additional preview pages of the FNK85N06 datasheet.

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FNK N-Channel Enhancement Mode Power MOSFET Description The FNK85N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. FNK85N06 General Features ● VDS =85V,ID =100A RDS(ON) < 7.1mΩ @ VGS=10V (Typ:5.
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