FNK80H11 - N-Channel Power MOSFET

FNK

General Description

The FNK 80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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FNK80H11 n-channel power mosfet by FNK - Datasheet Preview

Datasheet Details

Part number	FNK80H11
Manufacturer	FNK
File Size	779.57 KB
Description	N-Channel Power MOSFET
Datasheet	FNK80H11 Datasheet

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FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK80H11 General Features ● VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.