Datasheet4U Logo Datasheet4U.com

FNK80H11 - N-Channel Power MOSFET

Description

The FNK 80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

📥 Download Datasheet

Datasheet preview – FNK80H11

Datasheet Details

Part number FNK80H11
Manufacturer FNK
File Size 779.57 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK80H11 Datasheet
Additional preview pages of the FNK80H11 datasheet.

📁 Similar Datasheet

Other Datasheets by FNK

Full PDF Text Transcription

Click to expand full text
FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK80H11 General Features ● VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.
Published: |