Datasheet Summary
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK 80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V
(Typ:6.3mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Automotive applications
- Hard switched and high frequency circuits
- Uninterruptible power supply
Schematic diagram TO-220-3L top...