FNK FNK80H11
The FNK 80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | FNK80H11 |
|---|---|
| Datasheet | FNK80H11 Download |
| Manufacturer |  FNK |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications. FNK80H11GENERAL FEATURES
● VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ)● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply Schematic diagram TO-220-3L top view Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Package FNK22001 FNK80H11 TO-220-3L Reel Size - Tape width -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Sou
