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FNK8205-2 - N-Channel Power MOSFET

Description

The FNK8205-2 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 20V,ID = 6A RDS(ON).

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Datasheet Details

Part number FNK8205-2
Manufacturer FNK
File Size 1.10 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK8205-2 Datasheet
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FNK8205-2 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK8205-2 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D1 G1 G2 D2 General Features ● VDS = 20V,ID = 6A RDS(ON) <34mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.
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