Datasheet Summary
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK8205-2 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
D1 G1
G2
D2
General Features
- VDS = 20V,ID = 6A RDS(ON) <34mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V
S1 S2 Schematic diagram
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- Battery protection
- Load switch
- Power management
Marking and pin Assignment
SOT23-6L top view
Package Marking and Ordering Information
Device...