Datasheet Summary
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
D1
D2
General Features
- VDS = 20V,ID = 6A RDS(ON) <35m Ω @ VGS=2.5V RDS(ON) <27m Ω @ VGS=4.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
G1 G2
S1 S2
Schematic diagram
Application
- Battery protection
- Load switch
- Power management
TSSOP-8 top view
Marking and pin Assignment
Package Marking And Ordering Information
Device...