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FNK8310 - P-Channel Power MOSFET

Description

The FNK8310 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features

  • N-Channel VDS = 30V,ID =6.5A RDS(ON) < 32mΩ @ VGS=10V.
  • P-Channel VDS = -30V,ID = -7A RDS(ON) < 45mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width 8310 FNK8310 DFN2x3-8L Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless otherwise note.

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Datasheet Details

Part number FNK8310
Manufacturer FNK
File Size 1.54 MB
Description P-Channel Power MOSFET
Datasheet download datasheet FNK8310 Datasheet
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Full PDF Text Transcription

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N and P-Channel Enhancement Mode Power MOSFET Description The FNK8310 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. FNK8310 General Features ● N-Channel VDS = 30V,ID =6.
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