FNK FNK8310
The FNK8310 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.| Part No. | FNK8310 |
|---|---|
| Datasheet | FNK8310 Download |
| Manufacturer |  FNK |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FNK8310GENERAL FEATURES
● N-Channel VDS = 30V,ID =6.5A RDS(ON) < 32mΩ @ VGS=10V● P-Channel VDS = -30V,ID = -7A RDS(ON) < 45mΩ @ VGS=-10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width 8310 FNK8310 DFN2x3-8L Ø330mm 12mm
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Quantity 3000 units Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TA=25℃ TA=70℃ Maximum Power Dissipation TA=25℃ Operating Junc
