Datasheet Summary
FNK N-Channel Enhancement Mode Power MOSFET
Description
TheFNK8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
D1 G1
G2
D2
General Features
- VDS = 20V,ID = 6A RDS(ON) <38mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V
S1 S2 Schematic diagram
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- Battery protection
- Load switch
- Power management
Marking and pin Assignment
SOT23-6L top view
Package Marking and Ordering Information
Device...