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3DG9014M - SILICON NPN TRANSISTOR

Features

  • High P C and h FE, excellent hFE linearity, complementary pair with 9015M(3CG9015M). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 45 5.0 100 400 150 -55～150 V V V mA mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob NF IC=0.1mA IC=1.0mA IE=0.1mA VCB=50V VEB=5.0V VCE=5.0V IC=100mA IC=100mA VCE=5.0V VCE=5.0V VCB=10V VCE=5.0V Rg=2.0KΩ IE=0.

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Datasheet Details

Part number 3DG9014M
Manufacturer FOSHAN BLUE ROCKET
File Size 391.03 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 3DG9014M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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9014M(3DG9014M) NPN /SILICON NPN TRANSISTOR :、 。 /Purpose: L ow fr equency, lownoise p re-amplifier. :PC ,hFE , 9015M(3CG9015M)。/Features: High P C and h FE, excellent hFE linearity, complementary pair with 9015M(3CG9015M). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 50 45 5.0 100 400 150 -55～150 V V V mA mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob NF IC=0.1mA IC=1.0mA IE=0.1mA VCB=50V VEB=5.0V VCE=5.0V IC=100mA IC=100mA VCE=5.0V VCE=5.0V VCB=10V VCE=5.0V Rg=2.0KΩ IE=0 50 IB=0 45 IC=0 IE=0 IC=0 IC=1.0mA IB=5.0mA IB=5.0mA IC=2.0mA IC=10mA IE=0 f=1.0MHz IC=0.2mA f=1.0KHz ∆f=200Hz 5.0 0.05 0.05 1000 0.14 0.3 0.84 1.0 0.63 0.
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