FDG361N mosfet equivalent, n-channel mosfet.
* 0.6 A, 100 V.
RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V
* Low gate charge (3.7nC typical)
* Fast switching speed
* High performance tr.
where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
* 0.6 A, 100 V.
RDS(ON)= 500 mΩ.
These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Th.
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