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Fairchild Semiconductor Electronic Components Datasheet

IRFP250 Datasheet

N-Channel Power MOSFET

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Data Sheet
January 2002
IRFP250
33A, 200V, 0.085 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9295.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP250
TO-247
IRFP250
NOTE: When ordering, use the entire part number.
Features
• 33A, 200V
• rDS(ON) = 0.085
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
©2002 Fairchild Semiconductor Corporation
IRFP250 Rev. B


Fairchild Semiconductor Electronic Components Datasheet

IRFP250 Datasheet

N-Channel Power MOSFET

No Preview Available !

IRFP250
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFP250
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200
200
33
21
130
±20
180
1.44
V
V
A
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
810
-55 to 150
300
260
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BVDSS ID = 250µA, VGS = 0V (Figure 10)
200 -
-
VGS(TH) VGS = VDS, ID = 250µA
2.0 - 4.0
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
-
-
- 25
- 250
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
33 -
-
IGSS VGS = ±20V
- - ±100
rDS(ON) ID = 17A, VGS = 10V (Figures 8, 9)
- 0.07 0.085
gfs VDS 50V, ID = 17A (Figure 12)
13 19
-
td(ON)
tr
td(OFF)
VDD = 100V, ID = 30A, RGS = 6.2Ω, VGS = 10V,
RL = 3.2
MOSFET Switching Times are Essentially
Independent of Operating Temperature
- 18 30
- 125 180
- 70 100
tf - 80 120
Qg(TOT)
Qgs
Qgd
VGS = 10V, ID = 30A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of Operating
Temperature
-
-
-
79 120
12 -
42 -
CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
- 2000 -
COSS
- 800 -
CRSS
- 300 -
LD Measured from the Contact Modified MOSFET
Screw on Header Closer to Symbol Showing the
Source and Gate Pins to Internal Device
Center of Die
Inductances
LS Measured from the Source
Lead, 6.0mm (0.25in) from
Header to Source Bonding
D
LD
Pad G
LS
- 5.0 -
- 12.5 -
V
V
µA
µA
A
nA
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
nH
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
RθJC
RθJA
Free Air Operation
S
- - 0.70 oC/W
- - 30 oC/W
©2002 Fairchild Semiconductor Corporation
IRFP250 Rev. B


Part Number IRFP250
Description N-Channel Power MOSFET
Maker Fairchild
Total Page 7 Pages
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