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IRFP250 Datasheet

The IRFP250 is a Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIRFP250
ManufacturerInternational Rectifier
Overview . .
Part NumberIRFP250
DescriptionN-CHANNEL MOSFET
ManufacturerSTMicroelectronics
Overview The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge . (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 200 200 ±20 33 20 132 180 1.44 5
  –65 to 150 150 (1)ISD ≤33A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C (
*)P.
Part NumberIRFP250
DescriptionPower MOSFET
ManufacturerVishay
Overview Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is.
* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* Isolated central mounting hole
* Fast switching Available
* Ease of Paralleling
* Simple drive requirements
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet prov.
Part NumberIRFP250
DescriptionN-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview iscN-Channel MOSFET Transistor IRFP250 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum .
*Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V
*Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃.