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N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh™II MOSFET
TYPE IRFP250
s s s s s
IRFP250
VDSS 200V
RDS(on) < 0.085Ω
ID 33 A
TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
1
3 2
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.