IRFP250MPbF Datasheet | Infineon

Features - Advanced Process Technology - Dynamic dv/dt Rating - 175°C Operating Temperature - Fast Switching - Fully Avalanche Rated - Ease of Paralleling - Simple Drive Requirements - Lead-Free Description V(BR)DSS RDS(on) max. ID IR MOSFET™ 200V 0.075 30A IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and rugged device design that IR MOSFET™ devices are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for mercialindustrial...