Key Features
- Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V
- Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Switching Voltage Regulators
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
IRFP250MPBF
|
International Rectifier |
Power MOSFET |
|
IRFP250A
|
Fairchild Semiconductor |
Advanced Power MOSFET |
|
IRFP250MPbF
|
Infineon |
MOSFET |
|
IRFP253
|
International Rectifier |
N-Channel Transistor |
|
IRFP254A
|
Samsung Semiconductor |
Power MOSFET |
|
IRFP254
|
IRF |
Power MOSFET |
|
IRFP251
|
IRF |
N-Channel Transistor |
|
IRFP254N
|
Vishay |
Power MOSFET |
|
IRFP252
|
International Rectifier |
N-Channel Transistor |
|
IRFP254
|
Fairchild Semiconductor |
Power MOSFET |
