Datasheet Details
| Part number | IRFP250N |
|---|---|
| Manufacturer | IRF |
| File Size | 189.56 KB |
| Description | Power MOSFET |
| Datasheet | IRFP250N_IRF.pdf |
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Overview: PD - 95007A l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free IRFP250NPbF HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.
| Part number | IRFP250N |
|---|---|
| Manufacturer | IRF |
| File Size | 189.56 KB |
| Description | Power MOSFET |
| Datasheet | IRFP250N_IRF.pdf |
|
|
|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRFP250N | N-Channel MOSFET Transistor | Inchange Semiconductor |
 |
IRFP250NPBF | N-Channel MOSFET | INCHANGE |
|
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 |
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 |
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