Inchange Semiconductor IRFP250NPBF
N-Channel MOSFET
| Part No. | IRFP250NPBF |
|---|---|
| Datasheet | IRFP250NPBF Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●With TO-247 packaging●With low gate drive requirements
●Easy to drive
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRFP250NPBF
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APPLICATIONS
●Switching applications●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 30 21 120 PD Total Dissipation 214 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.7 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250NPBF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 200 VGS(th) Gate Threshold Voltag...