IRFP250NPBF Datasheet
IRFP250NPBF Datasheet (IRF)
IRF
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe.
DM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Reco.
IRFP250NPBF Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance an.
*With TO-247 packaging
*With low gate drive requirements
*Easy to drive
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
IRFP250NPBF
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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