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IRFS634B Datasheet - Fairchild

250V N-Channel MOSFET

IRFS634B Features

* 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum

IRFS634B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFS634B Datasheet (859.55 KB)

Preview of IRFS634B PDF

Datasheet Details

Part number:

IRFS634B

Manufacturer:

Fairchild

File Size:

859.55 KB

Description:

250v n-channel mosfet.

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IRFS634B 250V N-Channel MOSFET Fairchild

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