NDB6020P mosfet equivalent, n-channel mosfet.
-24 A, -20 V. RDS(ON) = 0.05 Ω @ VGS= -4.5 V. RDS(ON) = 0.07Ω @ VGS= -2.7 V. RDS(ON) = 0.075 Ω @ VGS= -2.5 V. Critical DC electrical parameters specified at elevated temp.
such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low i.
These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, p.
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