NDT014L - N-Channel MOSFET

Fairchild

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Datasheet Details

Part number	NDT014L
Manufacturer	Fairchild ↗
File Size	229.66 KB
Description	N-Channel MOSFET
Datasheet	NDT014L_FairchildSemiconductor.pdf

NDT014L Product details

Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line

Features

2.8 A, 60 V. RDS(ON) = 0.2 Ω @ VGS = 4.5 V RDS(ON) = 0.16 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current T A = 25°C unless otherwise noted NDT014L 60 ± 20 (Note 1a) Units V V A.

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Published: May 12, 2005 |