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11N40C - FQP11N40C

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 10.5 A, 400 V, RDS(on) = 530 mΩ (Max. ) @ VGS = 10 V, ID = 5.25 A.
  • Low Gate Charge (Typ. 28 nC).
  • Low Crss (Typ. 85 pF).
  • 100% Avalanche Tested.

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Datasheet Details

Part number 11N40C
Manufacturer Fairchild Semiconductor
File Size 681.22 KB
Description FQP11N40C
Datasheet download datasheet 11N40C Datasheet
Additional preview pages of the 11N40C datasheet.

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Full PDF Text Transcription

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FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET FQP11N40C / FQPF11N40C N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ November 2013 Features • 10.5 A, 400 V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V, ID = 5.25 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 85 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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