11N90C Key Features
- 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% aval
- Part: 11N90C
- Manufacturer: Fairchild (official site)
- Size: 853.50 KB
Other 11N90C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
11N90 | N-Channel Mosfet Transistor |
Unisonic Technologies |
11N90 | N-CHANNEL POWER MOSFET |
11N90C Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies,...