16N25 Key Features
- 16 A, 250 V, RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 8.0 A
- Low Gate Charge (Typ. 27 nC)
- Low Crss (Typ. 23 pF)
- 100% Avalanche Tested
- Part: 16N25
- Manufacturer: Fairchild (official site)
- Size: 636.93 KB
Other 16N25 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
16N25E | MTB16N25E |
16N25 Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and...