Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB16N25E/D
Designer's
TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N- Channel Enhancement- Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount ponents with higher power and lower RDS(on) capabilities. This advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power...
