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16N25 Datasheet Fqp16n25

Manufacturer: Fairchild (now onsemi)

Overview: FQP16N25 — N-Channel QFET® MOSFET FQP16N25 N-Channel QFET® MOSFET 250 V, 16 A, 230.

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 16 A, 250 V, RDS(on) = 230 mΩ (Max. ) @ VGS = 10 V, ID = 8.0 A.
  • Low Gate Charge (Typ. 27 nC).
  • Low Crss (Typ. 23 pF).
  • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche.

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16N25 Distributor