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Fairchild Semiconductor Electronic Components Datasheet

20N50 Datasheet

FDP20N50

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FDP20N50
500V N-Channel MOSFET
Features
• 20A, 500V, RDS(on) = 0.23Ω @VGS = 10 V
• Low gate charge ( typical 45.6 nC)
• Low Crss ( typical 27 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
May 2006
UniFETTM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
©2006 Fairchild Semiconductor Corporation
FDP20N50 Rev. A1
1
G
S
FDP20N50
500
20
12.9
80
± 30
1110
20
25.0
4.5
250
2.0
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Min.
--
0.5
--
Max.
0.5
--
62.5
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
http://www.Datasheet4U.com


Fairchild Semiconductor Electronic Components Datasheet

20N50 Datasheet

FDP20N50

No Preview Available !

Package Marking and Ordering Information
Device Marking
FDP20N50
Device
FDP20N50
Package
TO-220
Reel Size
--
Tape Width
--
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250μA, TJ = 25°C
ID = 250μA, Referenced to 25°C
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250μA
VGS = 10V, ID = 10A
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 10A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250V, ID = 20A
RG = 25Ω
VDS = 400V, ID = 20A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 20A
dIF/dt =100A/μs
(Note 4)
Min
500
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.50
--
--
--
--
--
0.20
24.6
2400
355
27
95
375
100
105
45.6
14.8
21.6
--
--
--
507
7.20
Max Units
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
5.0 V
0.23 Ω
-- S
3120
465
--
pF
pF
pF
200
760
210
220
59.5
--
--
ns
ns
ns
ns
nC
nC
nC
20 A
80 A
1.4 V
-- ns
-- μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.0mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 20A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP20N50 Rev. A1
2 www.fairchildsemi.com
http://www.Datasheet4U.com


Part Number 20N50
Description FDP20N50
Maker Fairchild Semiconductor
Total Page 8 Pages
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