Datasheet4U Logo Datasheet4U.com

20N50 Datasheet

The 20N50 is a N-Channel Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part Number20N50
ManufacturerNell Power Semiconductor
Overview The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching speed, low on-state resistance, breakdown voltage rating of 500V, and max. threshold voltage. RDS(ON) = 0.23Ω@VGS = 10V Ultra low gate charge(60nC max.) Low reverse transfer capacitance (CRSS = 27pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) m.
Part Number20N50
DescriptionN-Channel MOSFETS
ManufacturerOGFD
Overview The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low.
* 20.0A,500V,RDS(ON)=0.26 Ω@VGS=10V
* Low gate charge (typical 70Nc)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 20N50 TO-3P 0GFD www.goford.cn TEL：0755-86350980 FAX：0755-86350963 Absolute Maximum Ratings (TC=25℃, unless .
Part Number20N50
DescriptionFDP20N50
ManufacturerFairchild Semiconductor
Overview TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored t.
* 20A, 500V, RDS(on) = 0.23Ω @VGS = 10 V
* Low gate charge ( typical 45.6 nC)
* Low Crss ( typical 27 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s propr.
Part Number20N50
DescriptionN-CHANNEL POWER MOSFET
ManufacturerUnisonic Technologies
Overview The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low leakage current, etc. The UTC 20N50 is. * RDS(on) < 0.27Ω @ VGS=10V, ID=10A * High switching speed * Low leakage current
* SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 20N50L-T3P-T 20N50G-T3P-T 20N50L-T47-T 20N50G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Sou.

Similar Datasheets

Part Number Manufacturer Description
20N50C1 Intersil HGTH20N50C1
20N50E onsemi MTW20N50E
ET-20N50 ESTEK N-Channel MOSFET
20N50-HC Unisonic Technologies N-CHANNEL POWER MOSFET