20N50 Overview
The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount...
20N50 Key Features
- 20.0A,500V,RDS(ON)=0.26 Ω@VGS=10V
- Low gate charge (typical 70Nc)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
