20N50
Overview
The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailored to minimize on-state resistance.
- 20.0A,500V,RDS(ON)=0.26 Ω@VGS=10V
- Low gate charge (typical 70Nc)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
