20N50 Datasheet | OGFD

N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. V DSS RDS(ON ) 500V 0.26Ω 20A TO-3P Features - 20.0A,500V,RDS(ON)=0.26 Ω@VGS=10V - Low gate charge (typical 70Nc) - Fast switching - 100% avalanche tested - Improved dv/dt capability Ordering Information PART NUMBER...