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2N6784
Data Sheet December 2001
2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET [ /Title (2N67 84) /Subject (2.25A , 200V, 1.500 Ohm, NChannel Power MOSFET) /Autho r ()
The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Features
• 2.25A, 200V • rDS(ON) = 1.