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2N6788 - POWER MOSFET

Key Features

  • s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ V GS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Lead Temperature Weight JANTX2N67.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.426B HEXFET ® JANTX2N6788 POWER MOSFET JANTXV2N6788 [REF:MIL-PRF-19500/555] [GENERIC:IRFF120] N-CHANNEL Product Summary Part Number JANTX2N6788 JANTXV2N6788 BVDSS 100V RDS(on) 0.30Ω ID 6.0A 100 Volt, 0.30Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.