2N6788 Datasheet | International Rectifier

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.426B HEXFET ® JANTX2N6788 POWER MOSFET JANTXV2N6788 [REF:MIL-PRF-19500/555] [GENERIC:IRFF120] N-CHANNEL Product Summary Part Number JANTX2N6788 JANTXV2N6788 BVDSS 100V RDS(on) 0.30Ω ID 6.0A 100 Volt, 0.30Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance bined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtually any application where high reliability is required. Features : s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically...