2N6788
2N6788 is N-CHANNEL POWER MOSFET manufactured by Seme LAB.
FEATURES
- AVALANCHE ENERGY RATING
- SIMPLE DRIVE REQUIREMENTS
- HERMETICALLY SEALED
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.53 (0.021)
2 13
2.54 (0.100)
45°
TO39 Package (TO-205AF)
Underside View
Pin 1
- Source
Pin 2
- Gate
Pin 3
- Drain and Case
APPLICATIONS
- FAST SWITCHING
- MOTOR CONTROLS
- POWER SUPPLIES
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS Drain Source Voltage
100V
ID @Tcase = 25°C
Continuous Drain Current
6.0A
ID @Tcase = 100°C IDM
Continuous Drain Current Pulsed Drain Current 1
3.5A 24A
VGS Gate Source Voltage
±20V
PD@ Tcase = 25°C
Maximum Power Dissipation
20W
RθJ-C
Thermal Resistance Junction To Case
6.25°C/W
RθJ-A
Thermal Resistance...
