International Rectifier 2N6788
The efficient geometry achieves very low onstate resistance combined with high transconductance. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtually any application where high reliability is required.
| Part No. |
2N6788 |
| Datasheet |
2N6788
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| Manufacturer |
 International Rectifier |
| Description |
POWER MOSFET |
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FEATURES
: s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed ABSOLUTE MAXIMUM RATINGS
Parameter ID @ V GS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight JANTX2N6788, JANTXV2N6788 Units 6.0 3.5 24 20 0.16 ±20 5.5 -55 to 150 300 (0.063 in. (1.6mm) from case for 10.5 seconds) 0.98 (typical) A W W/K V V/ns o C g To Order Previous Datasheet JANTX2N6788, JANTXV2N6788 Device Index Next Data Sheet ELECTRICAL CHARACTERISTICS
@ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS /∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min.
