33N10 Datasheet FQP33N10

Manufacturer: Fairchild (now onsemi)

33N10 fqp33n10 by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	33N10
Manufacturer	Fairchild (now onsemi)
File Size	572.41 KB
Description	FQP33N10
Datasheet	33N10 Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Overview

FQP33N10 April 2000 QFET FQP33N10 100V N-Channel MOSFET General.

Key Features

33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C).

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	33N10	N-Channel MOSFET Transistor	Inchange Semiconductor

More Datasheets from Fairchild (now onsemi)

Part Number	Description
33N25	FDB33N25