Datasheet4U Logo Datasheet4U.com

33N10 Datasheet - Fairchild Semiconductor

FQP33N10

33N10 Features

* 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " "

33N10 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

33N10 Datasheet (572.41 KB)

Preview of 33N10 PDF

Datasheet Details

Part number:

33N10

Manufacturer:

Fairchild Semiconductor

File Size:

572.41 KB

Description:

Fqp33n10.

📁 Related Datasheet

33N10 N-Channel MOSFET Transistor (Inchange Semiconductor)

33N25 FDB33N25 (Fairchild Semiconductor)

33N60DM6 N-Channel Power MOSFET (STMicroelectronics)

3302 (3302x - 3310x) Three Phase Bridge (VMI)

3302F (3302x - 3310x) Three Phase Bridge (VMI)

3302UF (3302x - 3310x) Three Phase Bridge (VMI)

3306 (3302x - 3310x) Three Phase Bridge (VMI)

33063AP MC33063AP (Motorola)

3306B N-CHANNEL MOSFET (KIA)

3306F (3302x - 3310x) Three Phase Bridge (VMI)

TAGS

33N10 FQP33N10 Fairchild Semiconductor

Image Gallery

33N10 Datasheet Preview Page 2 33N10 Datasheet Preview Page 3

33N10 Distributor