33N10 Datasheet | Specifications & PDF Download

Philips Semiconductors Product specification PowerMOS transistor PHP33N10 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transi

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB33N10E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW33N10E/D Designer's ™ Data Sheet TMOS EĆFET . ™ MTW33N10E Motorola Preferred

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Isc N-Channel MOSFET Transistor IPB033N10N5LF ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistanc

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MTP33N10E Preferred Device Power MOSFET 33 Amps, 100 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche an

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MTP33N10E/D Designer's TMOS E-FET .™ Power Field Effect Transisto

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FQP33N10 April 2000 QFET FQP33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod

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FQA33N10 April 2000 QFET FQA33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod

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FQA33N10L September 2000 QFET FQA33N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transist

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FQB33N10 / FQI33N10 April 2000 QFET FQB33N10 / FQI33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification FQP33N10 ·FEATURES ·Low RDS(on) ·Silicon Gate for Fast Switching Sp

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FQAF33N10L September 2000 QFET FQAF33N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi

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FQB33N10L — N-Channel QFET® MOSFET FQB33N10L N-Channel QFET® MOSFET 100 V, 33 A, 52 mΩ October 2013 Description This N-Channel enhancement mode pow

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isc N-Channel MOSFET Transistor FEATURES · Static drain-source on-resistance: RDS(on) ≤60mΩ · Enhancement mode · Fast Switching Speed · 100% avalanch

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SFX33N10 33A, 100V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semico

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FQP33N10L-VB FQP33N10L-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configura

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FQAF33N10 April 2000 QFET FQAF33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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FQPF33N10L — N-Channel QFET® MOSFET FQPF33N10L N-Channel QFET® MOSFET 100 V, 18 A, 52 mΩ Description This N-Channel enhancement mode power MOSFET is

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STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N10 STP33N10FI VDSS 100 V 100 V R DS( on) < 0.06 Ω < 0.06 Ω ID 33

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FQPF33N10 April 2000 QFET FQPF33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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