STP33N10 Description
Unit V 250 1000 ± 100 µA µA nA ON (∗) Symb ol VG S(th) RDS(on) ID(on) Parameter Test Conditions Gate Threshold Voltage VDS = VGS ID = 250 µA Static Drain-source On VGS = 10V ID = 17 A R esist anc e VGS = 10V ID = 17 A Tc = 100 oC On St ate Drain Current VDS > ID( on) x RD S(on) max VGS = 10 V Min. 12 Unit V Ω Ω A DYNAMIC Symb ol gfs (∗) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output...