FQP33N10L - N-Channel MOSFET

VBsemi

Key Features

TrenchFET® Power.

FQP33N10L n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	FQP33N10L
Manufacturer	VBsemi
File Size	247.19 KB
Description	N-Channel MOSFET
Datasheet	FQP33N10L Datasheet

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Full PDF Text Transcription (Reference)

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FQP33N10L-VB FQP33N10L-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration 100 0.036 55 Single FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package Available RoHS* COMPLIANT D TO-220AB G GD S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.