FQP33N10 - N-Channel Mosfet Transistor

Inchange Semiconductor

Key Features

Low RDS(on).
Silicon Gate for Fast Switching Speed.
Rugged.
Low Drive Requirements.

FQP33N10 n-channel mosfet transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	FQP33N10
Manufacturer	Inchange Semiconductor
File Size	160.82 KB
Description	N-Channel Mosfet Transistor
Datasheet	FQP33N10 Datasheet

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification FQP33N10 ·FEATURES ·Low RDS(on) ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for low voltage applications such as Audio amplifier,high efficiency switching DC/DC converters, and DC motor control. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 33 A IDM Drain Current-Single Plused 132 A PD Total Dissipation @TC=25℃ 127 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.