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SFX33N10 - 100V N-CHANNEL MOSFET

This page provides the datasheet information for the SFX33N10, a member of the SFX33N10-HI 100V N-CHANNEL MOSFET family.

Description

These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology.

Features

  • 33A,100V,RDS(on)（typ）=34m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability TO-220-3L TO-220F-3L.

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Datasheet preview – SFX33N10

Datasheet Details

Part number SFX33N10
Manufacturer HI-SEMICON
File Size 667.71 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet SFX33N10 Datasheet
Additional preview pages of the SFX33N10 datasheet.

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Full PDF Text Transcription

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SFX33N10 33A, 100V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballasts based on half bridge topology 2 TO-251J-3L 1 3 1.Gate 2.Darin 3.
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