SFX33N10 Overview
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
SFX33N10 Key Features
- 33A,100V,RDS(on)（typ）=34m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability