SFX33N10 Key Features
- 33A,100V,RDS(on)（typ）=34m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
- Part: SFX33N10
- Manufacturer: HI-SEMICON
- Size: 667.71 KB
Related HI-SEMICON Datasheets
| Part Number | Description |
|---|---|
| SFX3N50 | 500V N-CHANNEL POWER MOSFET |
| SFX3N50TS | 500V N-CHANNEL POWER MOSFET |
| SFX18N50 | 500V N-CHANNEL MOSFET |
| SFX20N60 | 600V N-CHANNEL POWER MOSFET |
| SFX5N50 | 500V N-CHANNEL POWER MOSFET |
SFX33N10 Description
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.