SFX33N10 - 100V N-CHANNEL MOSFET

HI-SEMICON

Download the SFX33N10 datasheet PDF. This datasheet also covers the SFX33N10-HI variant, as both devices belong to the same 100v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology.

Key Features

33A,100V,RDS(on)（typ）=34m@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Improved dv/dt capability TO-220-3L TO-220F-3L.

📥 Download Datasheet

SFX33N10 100v n-channel mosfet by HI-SEMICON - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SFX33N10-HI-SEMICON.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SFX33N10
Manufacturer	HI-SEMICON
File Size	667.71 KB
Description	100V N-CHANNEL MOSFET
Datasheet	SFX33N10 Datasheet

Other Datasheets by HI-SEMICON

Part Number	Description
SFX3N50	500V N-CHANNEL POWER MOSFET
SFX3N50TS	500V N-CHANNEL POWER MOSFET
SFX18N50	500V N-CHANNEL MOSFET
SFX20N60	600V N-CHANNEL POWER MOSFET
SFX5N50	500V N-CHANNEL POWER MOSFET
SFX5N50TS	500V N-CHANNEL POWER MOSFET
SFX6N60	600V N-CHANNEL MOSFET
SFX7N50	500V N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SFX33N10 33A, 100V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballasts based on half bridge topology 2 TO-251J-3L 1 3 1.Gate 2.Darin 3.