SFX33N10 Overview
Description
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 33A,100V,RDS(on)（typ）=34m@VGS=10V
- Low gate charge
- Fast switching
- Improved dv/dt capability TO-220-3L TO-220F-3L
