Datasheet4U Logo Datasheet4U.com

FQA33N10 Datasheet 100v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQA33N10 April 2000 QFET FQA33N10 100V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Key Features

  • 36A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) D.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQA33N10L 100V LOGIC N-Channel MOSFET
FQA30N40 400V N-Channel MOSFET
FQA32N20C N-Channel MOSFET
FQA34N20 200V N-Channel MOSFET
FQA34N20L 200V LOGIC N-Channel MOSFET
FQA34N25 250V N-Channel MOSFET
FQA35N40 400V N-Channel MOSFET
FQA36P15 150V P-Channel MOSFET
FQA38N30 300V N-Channel MOSFET
FQA38N40 300V N-Channel MOSFET

FQA33N10 Distributor