FQB33N10 Datasheet 100v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB33N10 / FQI33N10 April 2000 QFET FQB33N10 / FQI33N10 100V N-Channel.

Datasheet Details

Part number	FQB33N10
Manufacturer	Fairchild (now onsemi)
File Size	585.35 KB
Description	100V N-Channel MOSFET
Datasheet	FQB33N10_FairchildSemiconductor.pdf

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Key Features

33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching. 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continu.

FQB33N10 Distributor

More Datasheets from Fairchild (now onsemi)

Part Number	Description
FQB33N10L	N-Channel MOSFET
FQB30N06	60V N-Channel MOSFET
FQB30N06L	60V LOGIC N-Channel MOSFET
FQB34N20	200V N-Channel MOSFET
FQB34N20L	200V N-Channel MOSFET
FQB34P10	MOSFET
FQB34P10TM_F085	100V P-Channel MOSFET
FQB3N25	250V N-Channel MOSFET
FQB3N30	300V N-Channel MOSFET
FQB3N40	400V N-Channel MOSFET