FQB30N06 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, DC/...
FQB30N06 Key Features
- 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 40 pF) Fast switching 100% ava