FQPF33N10L Overview
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 18 A, 100 V, RDS(on) = 52 mΩ (Max.) @ VGS = 10 V, ID = 9 A
- Low Gate Charge (Typ. 30 nC)
- Low Crss (Typ. 70 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating D GDS TO-220F G S
