Datasheet4U Logo Datasheet4U.com

FQPF33N10L - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 18 A, 100 V, RDS(on) = 52 mΩ (Max. ) @ VGS = 10 V, ID = 9 A.
  • Low Gate Charge (Typ. 30 nC).
  • Low Crss (Typ. 70 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source.

📥 Download Datasheet

Datasheet preview – FQPF33N10L

Datasheet Details

Part number FQPF33N10L
Manufacturer Fairchild Semiconductor
File Size 462.97 KB
Description N-Channel MOSFET
Datasheet download datasheet FQPF33N10L Datasheet
Additional preview pages of the FQPF33N10L datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQPF33N10L — N-Channel QFET® MOSFET FQPF33N10L N-Channel QFET® MOSFET 100 V, 18 A, 52 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. November 2013 Features • 18 A, 100 V, RDS(on) = 52 mΩ (Max.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 30 nC) • Low Crss (Typ.
Published: |