4435BZ Datasheet - Fairchild Semiconductor

FDS4435BZ

4435BZ Features

* Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A

* Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A

* Extended VGSS range (-25V) for battery applications

* HBM ESD protection level of ±3.8KV typical (note 3)

* High performance trench technology for extremely low rD

4435BZ General Description

This P-Channel MOSFET is produced ® using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Batte.

4435BZ Datasheet (372.15 KB)

4435BZ Datasheet Preview — Preview of 4435BZ PDF

Datasheet Details

Part number:

4435BZ

Manufacturer:

Fairchild Semiconductor

File Size:

372.15 KB

Description:

fds4435bz.

📁 Related Datasheet

4435 P-Channel MOSFET (Fairchild Semiconductor)

4435 P-Channel MOSFET (CXW)

4435 P-Channel MOSFET (Tuofeng Semiconductor)

4435 P-channel Enhancement Mode Power MOSFET (JIEJIE)

4435GM-HF AP4435GM-HF (Advanced Power Electronics)

4433AB CMOS DECADE COUNTER / 7-SEGMENT DECODER/DRIVERS (R & E International)

4400P Thick Film Surface Mounted Wide Body (Bourns Electronic Solutions)

4401 P-Channel MOSFET (Tuofeng Semiconductor)

4402 N-Channel MOSFET (Tuofeng Semiconductor)

4402 N-Channel MOSFET (GOFORD)

TAGS

4435BZ FDS4435BZ Fairchild Semiconductor

Image Gallery

4435BZ Features

4435BZ General Description

Datasheet Details

File Size:

Description:

4435BZ Distributor