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4435BZ FDS4435BZ

4435BZ Description

FDS4435BZ P-Channel PowerTrench® MOSFET www.DataSheet4U.com June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ .
This P-Channel MOSFET is produced ® using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize th.

4435BZ Features

* Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
* Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A

4435BZ Applications

* HBM ESD protection level of ±3.8KV typical (note 3)
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability

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FDS4435BZ Fairchild Semiconductor
Fairchild Semiconductor 4435BZ-like datasheet