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4435BZ - FDS4435BZ

General Description

been especially tailored to minimize the on-state resistance.

Key Features

  • Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A.
  • Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A.
  • Extended VGSS range (-25V) for battery.

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Full PDF Text Transcription for 4435BZ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 4435BZ. For precise diagrams, and layout, please refer to the original PDF.

FDS4435BZ P-Channel PowerTrench® MOSFET www.DataSheet4U.com June 2007 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ Features „ Max rDS(on) = 20mΩ at VGS = -10...

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h® MOSFET -30V, -8.8A, 20mΩ Features „ Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A „ Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A „ Extended VGSS range (-25V) for battery applications „ HBM ESD protection level of ±3.8KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Termination is Lead-free and RoHS compliant General Description This P-Channel MOSFET is produced ® using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.

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