* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
* Extended VGS range (-25V) for battery applications
* HBM ESD protection level of 6.5kV typical (note 3)
* High performance trench technology for extremely low rDS(on)
6673BZ
Fairchild Semiconductor
436.00 KB
Fds6673bz.
www.DataSheet.co.kr FDS6673BZ P-Channel PowerTrench® MOSFET January 2006 FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General Descri.
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