6670AL Datasheet | Fairchild Semiconductor

.. FDP6670AL/FDB6670AL May 2003 FDP6670AL/FDB6670AL N-Channel Logic Level Power Trench® MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features - 80 A, 30 V RDS(ON) = 6.5 mΩ @ VGS = 10 V RDS(ON) = 8.5 mΩ @ VGS = 4.5 V - Critical DC electrical parameters specified at elevated temperature - High performance trench technology for extremely low RDS(ON) - 175°C maximum junction temperature rating G D S TO-220 FDP Series TO-263AB FDB...